A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Posted on 19 January, 2018 by Moorfield

Jin, J., et al. Journal of Physics D: Applied Physics 2018 DOI: 10.1086/1361-6463/aaa4a2 The authors report the fabrication of high-speed Schottky diode rectifiers from zinc oxide, with PtOx Schottky contacts. For this, ZnO was deposited using PE-ALD, while metal and PtOx contacts were produced by RF sputtering using a Moorfield nanoPVD-S10A system, including in reactive sputtering mode […]

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Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Posted on 14 March, 2017 by Moorfield

Macháč, P., et al. Journal of Electrical Engineering 2017 DOI: 10.1515/jee-2017-0011 The work reports the synthesis of few-layer graphene films at the interface of an SiO2 chip and a cobalt thin film. The cobalt layer decomposes methane feedstock, absorbs the carbon released at the SiO2/cobalt interface where it assembles into an sp2 layer. This approach […]

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Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

Posted on 10 February, 2017 by Moorfield

Sassi, U., et al. Nature Communications 2017 DOI: 10.1038/ncomms14311 This work reports the use of graphene as part of an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. The nanoETCH system is critical as part of the work, being […]

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Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Posted on 20 January, 2017 by Moorfield

Jin, J., et al. IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2016.2647284 Zinc oxide Schottky diodes are fabricated using PE-ALD with RF sputtering used to create the silver oxide contact electrodes. RF sputtering was carried out using a nanoPVD-S10A system from Moorfield. Diode performance was optimised by tuning the PE-ALD parameters, with an optimised device […]

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Graphene growth by chemical vapor deposition process on copper foil

Posted on 12 December, 2016 by Moorfield

Macháč, P., et al. ElectroScope 2016 The paper demonstrates the production of graphene using the cold-walled method as implemented in the nanoCVD-8G. Link: Moorfield products: nanoCVD-8G […]

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A simple process for the fabrication of large-area CVD graphene based devices via selective in situ functionalization and patterning

Posted on 7 December, 2016 by Moorfield

Alexeev, A. A., et al. 2D Materials 2016 DOI: 10.1088/2053-1583/4/1/011010 This paper reports a simple method for the production of functional devices from CVD graphene (produced using a nanoCVD-8G system). Rather than forming devices on the application substrate after transfer, the authors demonstrate material patterning on the copper growth substrate, using lithography and plasma oxidation, […]

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nanoETCH featured product in Physik Journal

Posted on 17 October, 2016 by Moorfield

With all its unique features and capabilities, the nanoETCH is a featured product in the most recent Physik Journal (published by Wiley in Germany). Based in Germany? Click here to visit their website and get your copy! […]

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Graphene transfer methods for the fabrication of membrane-based NEMS devices

Posted on 13 August, 2016 by Moorfield

Wagner, S. et al. Microelectronic Engineering 2016 DOI: 10.1016/j.mee.2016.02.065 In this work, graphene, fabricated using a Moorfield nanoCVD-8G system, was transferred onto pre-fabricated microcavity substrates using different methods. The devices were then investigated and analyzed with respect to yield and quality of the free-standing membranes on a large-scale. An effective transfer method for layer-by-layer stacking […]

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Contact resistance study of various metal electrodes with CVD graphene

Posted on 27 July, 2016 by Moorfield

Gahoi, A. et al. Solid-State Electronics 2016 DOI: 10.1016/j.sse.2016.07.008 The contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. The graphene was made using a Moorfield nanoCVD-8G system. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at […]

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Versatile Polymer-Free Graphene Transfer Method and Applications

Posted on 8 March, 2016 by Moorfield

Zhang, G., et al. ACS Applied Materials and Interfaces 2007 DOI: 10.1021/acsami.6b00681 A new procedure for transferring graphene from growth substrates (e.g., copper foil) is described. The method involves placing post-growth substrates (produced here using a Moorfield nanoCVD-8G system) at an interface between immiscible hexane and an aqueous etching solution. The etching solution removes the […]